PEN as self-vetoing structural Material

Polyethylene Naphtalate (PEN) is a mechanically very favorable polymer. Earlier it was found that thin foils made from PEN can have very high radio-purity compared to other commercially available foils. In fact, PEN is already in use for low background signal transmission applications (cables). Recently it has been realized that PEN also has favorable scintillating properties. In combination, this makes PEN a very promising candidate as a self-vetoing structural material in low background experiments. Components instrumented with light detectors could be built from PEN. This includes detector holders, detector containments, signal transmission links, etc. The current R\&D towards qualification of PEN as a self-vetoing low background structural material is be presented.Comment: 4 pages, 7 figures, contribution to Proceedings of the sixth workshop on Low Radioactivity Techniques 2017, 23-27 May 2017 Seoul, to be published at AIP, editor: D. Leonar

BASIS WEIGHT UNIFORMITY OF LIGHTLY NEEDLED HYDROENTANGLED COTTON AND COTTON BLEND WEBS

New nonwoven products containing cotton and Lyocell (Trademarked name Tencel), low temperature thermal-bondable bicomponent olefin/polyester, or comber noils were developed using needlepunching and spunlacing (hydroentanglement). Webs containing five different blends were prepared by either light needlepunching, or light needlepunching followed by hydroentangling. We acquired detailed basis weight uniformity measurements to learn about processing and the influence of fiber blend composition on web uniformity. Basis weight uniformity was evaluated without regard to web direction ("Total" uniformity), along the machine direction (MD uniformity) and across the cross direction (CD uniformity) at numerous size resolutions. We observed that blending manufactured fibers (either Tencel or olefin/polyester) with bleached cotton and comber noils substantially improved basis weight uniformity of both types of nonwovens. We also observed that subjecting needled webs to hydroentangling significantly improved Total and MD uniformities

Radiation-hard active pixel sensors for HL-LHC detector upgrades based on HV-CMOS technology

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given

Аналіз деформування матеріалу з множинними тріщинами термомеханічної втоми як розломно-блокового середовища

Recent advances in cancer biology have emerged important roles for microRNAs (miRNAs) in regulating tumor responses. However, their function in mediating intercellular communication within the tumor microenvironment is thus far poorly explored. Here, we found miR-206 to be abrogated in human pancreatic ductal adenocarcinoma (PDAC) specimens and cell lines. We show that miR-206 directly targets the oncogenes KRAS and annexin a2 (ANXA2), thereby acting as tumor suppressor in PDAC cells by blocking cell cycle progression, cell proliferation, migration and invasion. Importantly, we identified miR-206 as a negative regulator of oncogenic KRAS-induced nuclear factor-kappa B transcriptional activity, resulting in a concomitant reduction of the expression and secretion of pro-angiogenic and pro-inflammatory factors including the cytokine interleukin-8, the chemokines (C-X-C motif) ligand 1 and (C-C motif) ligand 2, and the granulocyte macrophage colony-stimulating factor. We further show that miR-206 abrogates the expression and secretion of the potent pro-lymphangiogenic factor vascular endothelial growth factor C in pancreatic cancer cells through an NF-kappa B-independent mechanism. By using in vitro and in vivo approaches, we reveal that re-expression of miR-206 in PDAC cells is sufficient to inhibit tumor blood and lymphatic vessel formation, thus leading to a significant delay of tumor growth and progression. Taken together, our study sheds light onto the role of miR-206 as a pleiotropic modulator of different hallmarks of cancer, and as such raising the intriguing possibility that miR-206 may be an attractive candidate for miRNA-based anticancer therapies.Funding Agencies|German Federal Ministry of Education and Research (NGFN grant) [01GS0816]; Deutsche Forschungsgemeinschaft (DIP project) [WI3499/1-1]</p

Experimental study of double beta decay modes using a CdZnTe detector array

An array of sixteen 1 cm^3 CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-beta decay searches with such devices. As one of the double-beta decay experiments with the highest granularity the 4 x 4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Half-life limits for various double-beta decay modes of Cd, Zn and Te isotopes are obtained. No signal has been found, but several limits beyond 10^20 years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation. An improved limit for the beta^+/EC decay of Te 120 is given.Comment: 6 pages, 5 figure

Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip

The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. Planar pixel sensors and 3D pixel sensors have been investigated to equip this new pixel layer, and prototype modules using the FE-I4A have been fabricated and characterized using 120 GeV pions at the CERN SPS and 4 GeV positrons at DESY, before and after module irradiation. Beam test results are presented, including charge collection efficiency, tracking efficiency and charge sharing.Comment: 45 pages, 30 figures, submitted to JINS

Erratum to: Search for diboson resonances in hadronic final states in 139 fb−1 of pp collisions at s√ = 13 TeV with the ATLAS detector

A mistake was identified for the paper [1] in the treatment of the radion [2] cross-sections, which resulted in multiple changes.(undefined)info:eu-repo/semantics/publishedVersio

ATLASPIX3 Modules for Experiments at Electron-Positron Colliders

High-voltage CMOS detectors are being developed for application in High-Energy Physics. ATLASPIX3 is a full-reticle size monolithic pixel detector, consisting of 49000 pixels of dimension 50×150 μm$^2$. It has been realized in in TSI 180 nm HVCMOS technology. In view of applications at future electron-positron colliders, multi-chip-modules are built. The module design and its characterization by electrical test and radiation sources will be illustrated, including characterization of shunt regulators for serial chain powering. Lightweight long structure to support and to cool multiple-module chain are also being realized. The multi-chip-modules performance shows no degradation with respect to single-chip devices and the level of integration achieved is suitable for tracking at future e+e- accelerators